| 摘要 |
PURPOSE:To provide Si film of high photo-conductivity at high rate, by a method wherein when Si film is formed, hydrogen in atmosphere is decreased to the utmost and pressure of the atmosphere gas is reduced. CONSTITUTION:In order to form Si thin film, SiH4 is used as atmosphere gas and pressure thereof is made 10<-5>Torr or more. Ratio of density of Si atom to atom density of whole atmosphere is set to 1/2 or more. In this method, a thin film including Si can be deposited at high rate and element such as hydrogen to form bond of one in valency can be introduced simultaneously. Moreover, conduction type and conductivity of phosphorus or boron can be controlled, thereby Si thin film of high photoconductivity is obtained. |
