| 摘要 |
PURPOSE:To securely position a diffused region at the center in an aperture by a method wherein a thick field insulation film is adhered on a semiconductor substrate, the aperture is bored in correspondence to the diffused region, which region is formed by plasma ion implantation when it is formed at a substrate surface layer part exposed in the aperture. CONSTITUTION:The thick field insulation film 2 is adhered on the semiconductor substrate 1, and the open hole parts 10 and 9 are bored in correspondence to the diffused regions 6 and 9 to be formed. Next, the diffused regions 6 and 9 are formed at the surface layer part of the substrate 1 exposed by utilizing these open holes 10 and 9; thereat, these regions are formed by plasma ion implantation. In this manner, the regions 6 and 9 are securely coincident to the centers of the open hole parts 10 and 9; when leads 5 and 3 are adhered on these regions while they are made to run along or buried in the side wall of the film 2, there is no possibility of the positional slippages thereof. At this time, it is better to use Al, Mo, W, etc. for the leads 5 and 3. |
