发明名称 |
Method of forming amorphous silicon |
摘要 |
A method of forming, through plasma chemical vapor deposition technique, an amorphous silicon film, one side thereof intended for ohmic contact with specifically an aluminum electrode in a semiconductor device, comprising the steps of: introducing a starting gas containing at least a silicon-containing gas into an evacuated container; and subjecting said gas to plasma chemical vapor deposition through a glow discharge at a power density of 0.3 W/cm2 or greater. The particular a-Si region thus obtained provides a good ohmic contact with an aluminum electrode which is low in price and in melting point but high in reliability. In case an active a-Si region is desired, it is only necessary to lower the power density to a level below 0.3 W/cm2.
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申请公布号 |
US4446168(A) |
申请公布日期 |
1984.05.01 |
申请号 |
US19820363236 |
申请日期 |
1982.03.29 |
申请人 |
STANLEY ELECTRIC CO., LTD. |
发明人 |
KATO, KAZUHISA;YAGAMI, HIROYUKI |
分类号 |
C23C16/24;H01L21/205;(IPC1-7):H01L45/00 |
主分类号 |
C23C16/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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