| 摘要 |
PURPOSE:To obtain high reliable device by a method wherein polycrystalline Si is used as both a diffusion source and intermediate connection for Al wirings, and an Al electrode is applied with the sum in thickness of the diffusion layer and polycrystalline Si layer being set at 2mum. CONSTITUTION:Doped polycrystalline Si 2, 3 are put as a diffusion sorce in given locations of an Si substrate 1 to form a source layer 4, drain layer 5 and a thermally oxidized film 6. The sum (t) in thickness of the layer 2 or 3 and the diffusion layer 4 or 5 is set not less than 2mum. An oxidized film 7 is covered thereon except for gate electrode portions, then windows 8, 9 are bored and finally an Al electrode is applied. At this time, since the dimension (t) is larger than the maximum value in length of an alloy pit, there occurs no breakage in junction of the layers 4, 5. Also there exists no problem in electric contact between the Si substrate 1 and the polycrystalline Si layers 2, 3 as well as between the layers 2, 3 and the Al electrode 10, thus resulting in a high reliable electrode. |
