发明名称 CU ALLOY CLAD MATERIAL FOR LEAD MATERIAL OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To obtain a material for lead having excellent oxidation resistant property by covering a core material of Cu or an alloy including Cu with a Cu alloy including the specified amount of Mn, Zn, Ni, Al or moreover selectively including specified amount of Fe, Co or Sn. CONSTITUTION:A core material is made of a copper alloy including pure copper, phosphor bronze, Ag, Cr, Al etc. A clad material should be Cu alloy including Mn in 7-15wt% which suppresses oxide film and prevent deterioration in solubility of alloy and cold processing characteristic; Zn in 10-30wt% which also suppresses formation oxide film in combination with Mn, increases strength and prevent deterioration of ductility; Ni in 0.2-10wt% which prevents deterioration of ductility and improve strength of clad and heat resistivity; Al in 0.1-3wt% which also provide the same effect as Ni; and a kind or two kinds of Fe, Co, Sn in 0.2-0.3wt% which is added as required in order to further strengthen the strength of clad. The Cu alloy clad material for lead material having such structure excels in conductivity, heat radiation characteristic and oxidation resistivity.
申请公布号 JPS5976453(A) 申请公布日期 1984.05.01
申请号 JP19820183554 申请日期 1982.10.19
申请人 MITSUBISHI KINZOKU KK 发明人 MORIKAWA MASAKI;YOSHIDA HIDEAKI;KISHIDA KUNIO
分类号 C22C9/00;B32B15/01;C22C9/04;C22C9/05;H01L23/50 主分类号 C22C9/00
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