| 摘要 |
<p>BOOTSTRAP DRIVER CIRCUITS FOR AN MOS MEMORY A high speed, low power bootstrap driver is disclosed for use in an MOS memory. The basic driver includes first and second enhancement mode transistors for receiving a digital input. The drain of the first transistor is coupled to a high impedance depletion mode transistor, and the drain of the latter transistor is coupled to the source of a low impedance transistor. Another enhancement mode transistor is coupled via its sources to the drain of the second enhancement mode transistor and is coupled via its gate to the drain of the first enhancement mode transistor. A capacitor is connected between the drain of the high impedance transistor and the drain of the second enhancement mode transistor. When a low level input is received, the drain of the first enhancement mode transistors is rapidly bootstrapped to a high level voltage above the positive power supply for use as an output signal. A key modification to the driver described above adapts the driver for use in a fully asynchronous environment. Further modifications to the basic driver are described for use of the driver in a decoder, a buffer, and a clock generator.</p> |
