| 摘要 |
PURPOSE:To contrive the reduction in manufacturing processes of SBDTT and the like and also improvement in the yield rate of production of the titled semiconductor device by a method wherein, after an ion implantation has been performed through a polycrystalline silicon layer and through the intermediaries of an emitter electrode contact window and a collector electrode contact window, a base electrode contact window and the electrode contact window of a Schottky barrier diode are formed penetrating through the polycrystalline silicon layer and an insulating film. CONSTITUTION:After removal of the first resist mask 21, a polycrystalline Si layer 13 is formed on the surface of insulating films 4 and 7 and on the Si exposed surface in electrode contact windows 9a and 9c. Then, N type impurities are selectively ion-implanted through a polycrystalline Si layer 13 and also through the intermediaries of the electrode contact windows 9a and 9c using the insulating film 7 as a mask. Then, the second resist mask 22 is formed, and a base electrode contact window 9b is formed on a base region 5 and an SBD electrode contact window 9d is formed on the upper part of an N type epitaxial layer 3 by performing a reactive ion etching method. Then, the second resist mask 22 is removed, a high temperature annealing is performed, and an emitter region 16 and a collector-contact region 17 are formed. |
