发明名称 MANUFACTURE OF SEMICONDUCTOR BY ORGANIC METAL VAPOR GROWTH METHOD
摘要 PURPOSE:To produce heterogeneous surface bonding of high performance by efficient removal of trace amount of oxygen or water content remained in the gas pipe or contained in the air or the material gas entering into by leakage by purging with aluminum alkyl supplied for supplying pipes of various material gas and for an oven heated up to a specified temperature. CONSTITUTION:Trimethylaluminum is introduced into a gas pipe and an oven where temperature is kept at 70-300 deg.C, more preferably 100-150 deg.C, and then hydrogen gas is introduced to cleanse said pipe and oven. After that the temperature is raised up to predetermined crystal growth temperature, approximate 800 deg.C and a material gas desired according to a crystal to be grown in the same way as in conventional method is introduced into an oven F with being accompanied by hydrogen gas properly. When trimethylaluminum is introduced into the pipes and the oven F in advance of crystal growth operation as described above, trimethylaluminum adheres to walls of the pipes and the oven F so that oxygen and water content contained in various material gas flowing in the pipes or the oven after said introduction take place furious reaction with residual trimethylaluminum and are continuously removed. Consequently crystal growth is made excellently and elements of higher performance are obtained.
申请公布号 JPS5975622(A) 申请公布日期 1984.04.28
申请号 JP19820187025 申请日期 1982.10.25
申请人 NIHON SANSO KK 发明人 UMENO MASAYOSHI;SAKAI SHIROU
分类号 H01L31/04;C23C16/30;C23C16/44;C30B25/02;H01L21/205 主分类号 H01L31/04
代理机构 代理人
主权项
地址