| 摘要 |
PURPOSE:To attain ease of mixture of an MIS transistor (TR) forming a memory cell array and a word line driving TR, by driving the word line with a bipolar TR in a sprescribed form. CONSTITUTION:The word line W of a cell QT of a taper isolated type dynamic RAM or the like formed by an MIS TR requiring to flow a large current to a driving circuit of the word line W, is driven with a drive TR QD formed with bipolar TRs Qd, Qe having large driving capacbility even with a small area. The emitter area 11 of the TRs Qd, Qe is connected to the word line W, the collector area is used in common with a P well region 2, and the region 2 is not required to separate electrically. Thus, the mixture of the MIS TR forming the memory cell array and the word line driving bipolar TR is attained easily, allowing to minaturize the semiconductor storage device such as taper isolated dynamic RAM. |
