| 摘要 |
PURPOSE:To obtain the high-quality device of the high degree of integration by forming an intermediate metallic thin-film layer for relaxing a shock on a bonding between two insulating film layers interposing between a bonding pad and a semiconductor substrate. CONSTITUTION:The bonding pad 9, a connecting surface thereof for connecting a lead is exposed from a silicon oxide film 6 and which consists of an aluminum thin-film, is positioned just above internal elements 3a, 3b, and a field oxide film 2 and the first insulating film layer containing a CVDPSG film 4, the aluminum intermediate metallic thin-film layer 7, which is applied on the PSG film 4 and connected to one of internal elements 3a formed to the substrate through through-holes bored to the first insulating film layer, and a second insulating film layer 8 coating the layer 7 are interposed between the bonding pad 9 and the substrate 1. Accordingly, a strong shock is relaxed because the intermediate metallic thin-film layer 7 and the second insulating film layer 8 are interposed between the bonding pad and the CVDPSG film of the inter-layer insulating film even when a large shock is applied on the connection of lead wires, and the quality of the CVDPSG film is not deteriorated due to cracks. |
