| 摘要 |
PURPOSE:To form a highly accurate gate electrode by a method wherein the aperture part of the gate electrode region formed on the first insulating film located on a semiconductor layer and the region other than the side face of the aperture part of the second insulating film formed on the whole surface, including the side face of the aperture part of the gate electrode region, is removed and a gate electrode is formed on the surface of the semiconductor layer which is exposed at the aperture part and the regions including the surface of the first insulating film located on the circumferenced of the aperture. CONSTITUTION:An N type GaAs layer 2 is formed on a semiinsulative GaAs substrate 1 as a semiconductor layer, the first insulative film 6 is provided on said layer 2, the first insulating film 6 is provided thereon, and an aperture is provided by performing a selective etching on the region where a gate electrode will be formed. Then, the second insulating film 7 is formed on the surface of the N type GaAs layer 2 and the surface of the insulating film 6. Subsequently, the insulating film 7 located on the part other than the side face of the first insulating film 6 is removed by performing a dry etching having a high degree of directivity. Then, the first metal layer 3 is formed on the surface of the insulating films 6 and 7 and the N type GaAs layer 2, and an etching is performed on a metal film 3 and the insulating film 6 using the photoresist film 4 formed on the film 3 as a mask. Then, after a metal film 5 has been formed on the surface of the N type GaAs layer 2 and the photoresist layer 4, the photoresist film 4 and the metal film 5 formed thereon are removed. |
