| 摘要 |
PURPOSE:To simplify the manufacturing process of the titled transistor by a method wherein a gate insulative layer is coated on the circumferential part of a gate electrode layer, and a semiconductor layer is made to cover the source electrode layer, the first insulative layer, a gate insulative layer, the second insulative layer, the side face of the lamination of a drain electrode layer, and the upper surface of a drain electrode layer. CONSTITUTION:On an insulated substrate 1, materials are laminated successively as follows: Al is laminated as a source electrode layer 5, SiO2 as the first insulative layer 7, Al as a gate electrode layer 2, SiO2 as the second insulative layer 8, and Al as a drain electrode layer 6. An electrode layer is formed by performing a patterning. Then, a gate insulative layer 9 is formed by oxidizing the circumferential part of the gate electrode layer 2. Subsequently, an amorphous-silicon hydride layer is formed as a semiconductor layer 4 in such a manner that said layer covers the entire electrode layer. As the layer type electode-structure thin film transistor formed as above can be narrowed in channel length, its working speed is made fast, and the same ON-state current can be obtained with the element which is smaller in size than that of the conventional device. |
