| 摘要 |
PURPOSE:To increase the collection efficiency on the side of a long wavelength by a method wherein a transparent conductive film, which comes in contact in low resistance with an amorphous silicon, is interposed between the amorphous silicon and the metal having a high reflection factor in a visible light. CONSTITUTION:A transparent conductive film 8, which is the first electrode, is formed on a light transmitting insulated substrate 7 by performing a sputtering method. This film 8 consists of indium oxide tin, tin oxide, indium oxide and the like. Then, a P type layer 9 and the silicon layer 12, consisting of a non- doped layer 10 and an N type layer 11, are formed successively. The P type layer 9 is to be formed in the thickness of 40-1,000Angstrom with the amount of doping of 0.01-1%, the non-doped layer 10 in the thickness of 0.5-2mum, the N type layer 11 in the thickness of 200-1,000Angstrom and with the amount of doping of 0.1- 3%. Subsequently, a transparent conductive film 13 is formed on the amorphous silicon by performing a sputtering and a metal thin film 14 such as Al, for example, is formed by performing a vapor-deposition. Said transparent conductive film 13 consists of indium oxide tin, tin oxide, indium oxide and the like. In other words, a double-layer constructed second electrode 15 is formed with a transparent conductive film and a metal thin film. |
