| 摘要 |
PURPOSE:To obtain the thin film transistor having no cracks and exfoliation on the semiconductor layer and also having a small parasitic capacitance by a method wherein the gap located between the three electrodes of a source, a gate and a drain is filled with an intertripple electrode insulative layer, and a semiconductor layer to be used to cover a source electrode, an interelectrode insulative layer, a gate insulative layer and a drain electrode are provided. CONSTITUTION:Aluminum is vapor-deposited on an insulated substrate 1 in the thickness of 2,000Angstrom , a patterning is performed inbetween a source electrode 5 and a gate electrode 2 in the width of 2mum, on a gate electrode 2 in the width of 2mum, on a gate electrode 2 in the width of 8mum, and in-between a gate electrode and a drain electrode in the thickness of 2mum, and an intertripple-electrode insulative layer 7 is formed by oxidizing the exposed aluminum part. A gate insulative layer 3 is formed in the thickness of 1,000Angstrom by oxidizing the surface of the electrode 2, and a hydrogenated amorphous-silicon layer is formed by glow discharge decomposition method in the thickness of 5,000Angstrom in such a manner that the electrode 2, which is covered by an electrode 5 and the insulative layer 3, and an electrode 6 are covered by the hydrogenated amorphous-silicon layer. Because no gap is formed between the electrodes 5 and electrodes 2, 6 while the interelectrode insulative layer 7 is made to fill the space between said electrodes, no exfoliation and cracks are generated on the semiconductor layer. |
