| 摘要 |
PURPOSE:To crystal-grow an insulating thin-film stably with a prescribed crystalline composition and prescribed film thickness from the beginning by heating metal Al in a mixed gas of HCl and H2, removing a passive oxide film and growing the metal Al in an epitaxial manner. CONSTITUTION:A purified Al sample is placed on a source boat 11 made of quartz, and etched through heat treatment for 45min at approximately 550 deg.C by a resistance heating furnace 13 while flowing in H2 gas, in which approximately 1% HCl gas is mixed, from a gas introducing port 17. Si wafers 8 are inserted while H2 and CO2 are fed from gas introducing ports 16, 18 in the same manner as conventional devices, and MgO.Al2O3 is grown on the Si wafers 8 in an epitaxial manner. MgO.Al2O3 having film thickness and the composition in accordance with setting is formed from the beginning because AlCl3 is fed at a prearranged ratio of quantity at that time. Accordingly, an oxide film being growing on metal Al is removed sufficiently in a reaction vessel and the metal Al is crystal-grown in succession when a chloride is formed from the metal Al, thus obtaining the stable insulating thin-film. |
