| 摘要 |
<p>PURPOSE:To obtain the titled memory, having a memory element with which write-in, read-out and erasing operations can be performed and which has little deterioration in memory elements, by a method wherein the quantity of charge carrier injected through an insulating film is controlled by increasing or decreasing the substrate potential. CONSTITUTION:In the N-channel element, an electron and a paired hole are ionizationally induced in the vicinity of a drain 82 by the flow 8a of the electron travelling on a channel 83, but the most part of a hole runs into a substrate 81 as a substrate current. At this time, if the channel impurity density is high, a paired electron and a hole are induced in the surface depletion layer by the secondary ionization using the hole which constitutes the substrate current as a seed. The electron generated by the secondary ionization is accelerated toward the surface, but a part of which becomes to have the energy enough to go through an insulating film barrier, and injected into an insulating film 84. The above-mentioned injection of electron is generated only when a proper degree of positive potential is applied to the drain and the gate and when the substrate is maintained in the proper degree of negative potential.</p> |
