| 摘要 |
<p>PURPOSE:To obtain the device, wetproofing thereof is excellent and in which leakage currents are hardly generated, by forming a phosphorus silicate glass coating to the surface of a semiconductor element and a photosensitive resin coating on the PSG coating. CONSTITUTION:The PSG coating 8 is formed to the IC element, in which a silicon oxide film 2 is formed on a silicon substrate 1 and a metallic electrode wiring 4 is formed on the film 2, through a vapor growth method, etc. The thickness of the PSG coating 8 shall be approximately 1mum. A photosensitive resin such as cyclized butadiene is further applied on the coating 8 to form the photosensitive resin coating 9 in the thickness of 1mum-10mum, a solvent is evaporated through heat treatment, the surface is exposed and developed except a wire bonding section by using a glass photo-mask 10, and the coating 9 of the bonding section is removed. The coating 8 is etched while using the coating 9 as a mask to expose the wiring 4, and the wire bonding section 7 is formed. A substance, which has excellent adhesive property with PSG, flexibility, heat resistance and wetproofing and itself thereof has photosensitivity, is used as a material for the coating 9.</p> |
