| 摘要 |
PURPOSE:To obtain the multisource field-effect transistor with which an AND circuit having a small number of elements can be constituted by a method wherein a gate electrode provided on the N type semiconductor layer located on the high resistance substrate, a drain electrode and a source electrode, consisting of a plurality of electrodes which can be electrically coupled only through the intermediary of the N type semiconductor layer on the drain side of a gate electrode, are provided. CONSTITUTION:The N type GaAs layer 42 formed by the implantation of an Si<+> ion, for example, is pectinately formed on a semi-insulative GaAs substrate 41. A gate electrode 43 is formed in such a manner that it is crossing the pectination, a drain electrode is formed common with two pectinations, while sources 45 and 46 are formed on each pectination independently. When the drain 44 of a field-effect transistor 44 is connected to the positive DC electrode VDD through the intermediary of an FET13 for loading and a gate 43 is grounded, the transistor is completely turned to OFF state when the sources 45 and 46 have the voltage of 0.5V or above, and the drain electrode 44 has the voltage almost equal to the supply voltage. On the other hand, when at least one of the sources 45 and 46 drops to zero voltage or below, a drain current runs, and the drain 44 is reduced in potential, and brought to a steady state. |
