| 摘要 |
PURPOSE:To improve the degree of integration of the device using a CMOS element by boring a contact opening, introducing boron to the whole surface of a polycrystalline silicon film formed to the whole surface of a main surface, selectively removing a silicon oxide film formed to the whole surface and introducing phosphorus only to the contact opening section of an n type diffusion layer section while using the oxide film as a mask. CONSTITUTION:The contact openings are formed protruded from the edges of impurity diffusion layers 106, 107. The polycrystalline silicon film 110 in 1,000Angstrom is grown on the whole surface of the main surface, and boron is introduced to the whole surface. Boron is introduced to both contact opening sections of the p and n type impurity diffusion layers through the polycrystalline silicon film 110. The non-doped silicon oxide film 113 is grown on the whole surface of the main surface, the silicon oxide film 113 is removed selectively by using a photoetching method, the polycrystalline silicon film 110 of the n type diffusion layer section is exposed, and phosphorus is introduced to the whole surface through a thermal diffusion method at 900 deg.C. The silicon oxide film 113 functions as a mask on the diffusion of phosphorus to prevent the introduction of phosphorus in the opening section to the p type diffusion layer, and a novel p type diffusion layer 112 is formed. |
