| 摘要 |
PURPOSE:To offer efficiently a fine pattern drawing with high precision by arranging a through hole on nearly same axis as that of an aperture of a metallic layer formed on an insulation thin film on a semiconductor substrate thereunder to enable heat cleaning as used. CONSTITUTION:An aperture 25 is formed by etching in center of a bridge 27 formed as single composition between electrodes 23 and 26 opposite to each other and a through hole 24 located on same axis as that of the aperture 25 is formed on Si substrate 21 and SiO2 film 22 with having slightly bigger diameter than that of the aperture 25. When electric current flows from an external electric power supply 28 into the bridge 27 through a switch 29, heat cleaning is made efficiently. As a base consists of Si which is high melting point and an aperture forming an aperture mask is formed on a metallic layer consists of or the like which is extremely thin, an aperture mask with high precision especially sharpness of its edge can be formed. |
