| 摘要 |
PURPOSE:To blow only the active seeds of a reactive gas against a sample, and to improve the accuracy of fine finishing by generating the active seeds by the irradiation of ultraviolet rays and introducing the active seeds into a chamber separately installed through a striped slit. CONSTITUTION:A first vessel 1 under vacuum is set up to the dry etching device, and a second vessel 2 is arranged while using the bottom wall of the vessel 1 as an upper wall. The vertically penetrated striped slit 3 is bored at the central section of the common wall of the vessels 1, 2 to communicate the vessels 1, 2. A gas introducing port 4 introducing the reactive gas and an exhaust port 5 evacuating the inside of the vessel 1 are formed to the vessel 1 while quartz glass 9 through which ultraviolet beams from an ultraviolet light source 6 transmit is disposed to the upper section of the vessel 1. The active seeds of the reactive gas are generated around the slit 3 by the irradiation of ultraviolet beams, only the active seeds are blown against the sample 11 on a susceptor 10 in the vessel 2 through the slit 3, and the accuracy of fine finishing is improved. |
