| 摘要 |
PURPOSE:To contrive that the influence by gate heat treatment does not extend to an ohmic source and a drain electrode by newly providing a source and a drain electrode after first providing a gate electrode on a wafer reactive layer and treating it at a high temperature. CONSTITUTION:An epitaxial layer 12 on a GaAs substrate 11 is covered with another coating layer 13, and the source and the drain electrode 14a and 15a for monitor purpose are formed on an exposed part. The current between both the electrodes is monitored by removing the layer 13, etching is performed to a fixed current value, including each gate corresponding position at the part covered with the layer 13, and gate recesses 16a and 16b are dug. After vapor- deposition of gate electrode metals 17a and 17b in the grooves 16a and 16b and treatment thereof at about 500 deg.C, the source and the drain electrode 14b and 15b are formed respectively. This constitution does not produce the thermal transformation of the electrodes 14b and 15b or unevenness on the surface. |
