| 摘要 |
PURPOSE:To realize a complete single-crystallization of an Si thin film and to reduce procesing time of a wafer substantially by a method wherein a narrow beam which is longer than the whole excited domain is radiated onto a substrate and the beam is scanned to the direction of the width relatively against the substrate. CONSTITUTION:A layer shape electron beam 11 accelerated by approximately 1-10keV is condensed along the scanning direction and radiated onto the surface of a wafer 8 on which the beam 11 becomes the thinnest. As a result, an Si thin film 13 on the surface of the wafer 8 is melted and a thin line of a melted region 17 crossing the surface of the wafer 8 is produced. If the electron beam 11 is scanned to the direction of the arrow 12 relatively against the wafer 8, the whole area of the Si film 13 is single-crystallized by one scanning. In this case, the thickness, intensity and scanning speed of the electron beam 11 on the surface of the wafer 8 are determined by the relation between each of above item and heat radiation condition near the surface of the wafer 8. |
