| 摘要 |
PURPOSE:To etch the whole surface of a material to be etched uniformly by forming a mask for inhibiting etching coating adjacent to the peripheral section of the material to be etched on a susceptor electrode. CONSTITUTION:The mask 9 for inhibiting etching is placed and fixed on the central hole of a mask 8 for protecting an electrode. Since the peripheral section of a wafer 5 is coated with the mask 9 for inhibiting etching, a tendency of which an electric field concentrates to the periphery of the wafer is relaxed, and a physical anisotropic etching reaction by the acceleration of ions advances at approximately the same speed as the central section of the wafer. Reactive components generating a gas electrochemical reaction also flow into the peripheral section of the wafer because the peripheral section of the wafer 5 is not fast stuck and coated with the mask 9 but is coated while taking a slight space. Accordingly, gas electrochemical etching also advances at approximately the same speed in the peripheral section and the central section. |
