| 摘要 |
<p>PURPOSE:To obtain a mask for optical exposure having a desired pattern formed without deterioration of a resist sensitive to charged corpuscular beams due to heat, by forming a heat insulating layer made of a material higher in heat conductivity in the direction parallel to the surface of a substrate than in the veritcal direction and the substrate, a low electrical conductivity layer,and a light shading layer on the substrate transparent for the UV light and visible light. CONSTITUTION:A heat insulating layer 6 made of, e.g., BeO, higher in heat conductivity in the direction parallel to the surface of the substrate 5 than in the vertical direction and the substrate 5 is formed to 50nm thickness on the substrate 5 transparent for the UV light and visible light. A 50nm thick low resistance layer 7 made of silicon doped with impurities is formed on the layer 6 by the CVD method. A 200nm thick light shading layer 8 made of chromium oxide is vapor-deposited on the layer 7. On this layer, a charged corpuscular beams sensitive resist layer 9 is formed to 500nm thickness. A desired pattern is depicted on the balnk mask thus formed by using electron beams as said charged corpuscular beams. At that time, since heat generated in the substrate 5 is radiated from the layer 6, and charge accumulated in the layers 8, 9 is neutralized through the layer 7, the layer 9 is not deteriorated by heat and not affected accumulation of the charge, and a pattern can be depicted with high precision.</p> |
