| 摘要 |
PURPOSE:To improve the wetproofing of a silicon oxide film, and to enhance the performance of a semiconductor device by forming the silicon oxide film, a composition thereof consists of Si2O3, to the semiconductor device and bringing one of the absorption peaks of infrared rays of the silicon oxide film and a refractive index to predetermined values. CONSTITUTION:N<+> type regions 7, 6 are formed in a region surrounded by the thick SiO2 film 2 of a P type silicon semiconductor substrate 1 forming an MISFET, and a multilayer silicon layer 4 is formed on an SiO2 film 3 of the upper section of the regions 7, 6. A phosphorus silicate glass PSG film 8 is formed on the film 2, and a bonding pad section 11 and an Al layer 9 as a wiring are formed on the film 8. The P-Si2O3 film 10 in predetermined thickness is formed as a protective film while coating a pellet section except the bonding pad section 11 of an MOSFET. One of the peaks of absorption of infrared rays of the film 10 is brought to 1,000-1,050cm<-1>, the refractive index of the film 10 is brought to 1.5-1.6, and the wetproofing of the film 10 is improved. |
