| 摘要 |
Semiconductor laser which comprises: a semiconductor body 32 having two end faces of which one at least partially transmits light, a substrate 38 having opposite main surfaces 40, 42 and a ledge 46 in one of the main surfaces, this ledge extending between the two end faces 34: an active layer 50 on the substrate, the thickness of this active layer narrowing in the lateral direction, starting from the part which covers the ledge 46; a confinement layer 52 covering the active layer; a first electrically conductive layer 60 covering a part of the confinement layer above the ledge and a second electrically conductive layer 62 covering a part of the second main surface 42 of the substrate 38, this semiconductor laser being characterised in that the substrate 38 is of one type of conductivity and the confinement layer 52 and the overlay layer 54 which covers the confinement layer 52 are of the opposite type of conductivity and in that the refractive index of the active layer 50 is greater than that of the substrate and than that of the confinement layer. <IMAGE>
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