| 摘要 |
PURPOSE:To cause a larger current to flow and to obtain a larger charge capacity, by laminating alternately a P-layer and an N-layer, and connecting all the P-layers and all the N-layers in each circuit respectively, which are provided with each electrode independently. CONSTITUTION:An N-type Si layer 21 and a P-type Si layer 22 are alternately laminated, and the both sides are subjected to a mesa etching whereby a trape zoid is formed. By a lithography, a protection film 41 having a window is made on the left side surface of the trapezoid. Applying the mask 41, an N-diffusion layer 2 is made. By eliminating the mask 41, a diffusion mask 51 is provided on the right side surface to make a P-layer 3. The mask 51 is eliminated and a metal is vapor deposited to make electrodes 5 and 6. The area of a P-N junction increases, so that a diode for large current or a capacitor of large capacity can be obtained.
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