发明名称 FORMATION OF FILM BY SPUTTERING
摘要 PURPOSE:To control easily the amount of H2O to be introduced into a vacuum vessel by producing H2O from gaseous H2 and O2 by a plasma reaction at the outside of the vessel and by introducing the produced H2O into the vessel to carry out film formation by reactive sputtering. CONSTITUTION:Gaseous H2 34 gaseous O2 34' as gaseous starting materials and gaseous Ar 34'' as an inert gas are introduced into a mixer 29 while controlling the flow rates with flowmeters 31, 31', 31'' and flow rate regulating valves 32, 32', 32'', and they are uniformly mixed. The gaseous mixture is introduced into a reaction vessel 27 and excited by electric discharge with no electrode caused by supplying AC to a coil 36 from an AC power source 26. The gaseous mixture is allowed to react to produce OH ion or gaseous H2O. The produced reactive gas is diffused in a vacuum vessel 1 through an introducing duct 35 by the difference in pressure between the vessels 1, 27.
申请公布号 JPS5974278(A) 申请公布日期 1984.04.26
申请号 JP19820184385 申请日期 1982.10.20
申请人 HITACHI SEISAKUSHO KK 发明人 KATAOKA HIROYUKI;KOBAYASHI HIDE;TAKAGAKI TOKUSUKE;ABE KATSUO
分类号 C23C14/06;C23C14/00;C23C14/34 主分类号 C23C14/06
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