| 摘要 |
<p>A semiconductor device (1) including a monocrystalline region (5) of semiconductor grey tin in intimate contact with a monocrystalline substrate (3). The region (5) of semiconductor tin is stablilised by interaction with the monocrystalline substrate (3) which has a crystallographic structure isomorphous with the structure of grey tin and an interatomic spacing matched to the interatomic spacing of the semiconductor region (5). The semiconductor region (5) may be further stabilised by inclusion of germanium dopant. The matching substrate (3) may be of indium antimonide, cadmium telluride, germanium or silicon material. The tin region (5) is p-type and the substrate (3) n-type thus forming a p-n diode. Ohmic contact to the tin region (5) is by means of an indium pressure contact (9). Alternatively the thickness of the tin layer can be increased, the portion furthest from the substrate being in the metallic white tin form. Infra-red sensitive photovoltaic and photoconductive devices may be produced. The semiconductor region of tin may be grown by molecular beam epitaxy. <IMAGE></p> |
