| 摘要 |
<p>A static type semiconductor memory device comprises a boosting circuit (11) for boosting a power source voltage (Vcc), a switch circuit (12) which selects the power source voltage (Vcc) in an operation mode while selecting a boosted voltage (Vccx) from the boosting circuit (11) in a wait mode, and a static semiconductor memory cell (13) which receives the voltage selected by the switch circuit (12), as a power source voltage (Vccs).</p> |
