| 摘要 |
PURPOSE:To enable the easy and continuous growth of a strip crystal of Si having uniform thickness, using an apparatus for the pulling of an Si strip crystal, by changing the inclination and thickness of the upper end of the capillary dies. CONSTITUTION:A pair of graphite capillary dies 2 are placed oppositely in a graphite crucible 1. The die 2 has hemiellipsoidal shape having inclined upper end and a slit formed along the long axis of the ellipsoid, and is disposed facing the inclined face inward. The Si block in the crucible 1 is melted in an Ar atmosphere to immersed the lower part of the upper end of the die 2 in the molten Si liquid 4. An Ai strip crystal 7 having uniform thickness can be obtained by pulling the crystal using a plate seed crystal. |
