| 摘要 |
<p>A complementary metal-oxide semiconductor integrated circuit device comprises a plurality of pairs of N- and P-channel metal-oxide semiconductor transistors (Q1a, Q2a, Q3a, Q4a; Q1b, Q2b, Q3b, Q4b). The plurality of pairs are juxtaposed with respect to each other and no isolation areas are formed between the respective pairs. A single pair or a series of pairs out of the plurality of pairs constitute a functional device (30). The gate electrodes (311a, 311b) of the N- and P-channel metal-oxide semiconductor transistors in the pair adjacent to the functional defice (30) are held in relatively negative (GND) and positive (VDD) potential voltages, respectively, so that the functional device (30) is electrically isolated from the remaining portions.</p> |
