Microstrip transistor oscillator with dielectric resonator stabilization

摘要

A device using a dielectric resonator with a very low temperature coefficient in a very high frequency transistor oscillator (3 to 10 GHz) so as to benefit both from the very high power available and the maximum frequency stabilization due to the resonator. In the case of a FET, the gate is connected to one end of a line coupled to a dielectric resonator at a point along the line situated at a quarter wavelength from the other end of the line, which in turn is connected through a discrete resistor to a half wavelength open circuit line. Thus, the oscillation is damped when the frequency varies from the resonant frequency of the resonator.