发明名称 |
Semiconductor laser with conductive current mask |
摘要 |
A semiconductor laser is disclosed wherein a grid-like conductive current mask is fabricated between the active region of the laser and one of its electrodes. In one embodiment, the conductive current mask is fabricated in the bottom regions of a corrugated pattern that is created along the length of the semiconductor laser. In a second embodiment, the conductive current mask is totally embedded within a lightly doped buffer layer that is grown proximate to the active region.
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申请公布号 |
US4445218(A) |
申请公布日期 |
1984.04.24 |
申请号 |
US19810306287 |
申请日期 |
1981.09.28 |
申请人 |
BELL TELEPHONE LABORATORIES, INCORPORATED |
发明人 |
COLDREN, LARRY A. |
分类号 |
H01S5/00;H01S5/042;H01S5/062;H01S5/12;(IPC1-7):H01S3/19 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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