SOLID-STATE IMAGING DEVICE

摘要

: The present invention relates to a solid-state imaging device wherein a MOS sensor is employed for a photosensor part, and a CTD shift register is employed for a read-out circuit. First and second transfer gates are connected between vertical signal output lines and the CTD, and a reset gate is connected between a juncture of the first and second transfer gates and a reset voltage line. A method is adpoted in which signal outputs of a plurality of rows are transferred to the CTD in a horizontal blanking period, and signals of a plurality of rows are simultaneously read out in a horizontal scanning period. At the signal transfer, bias charges are fed into the vertical signal output lines from the CTD, and mixed charges consisting of the bias charges and signal charges are transferred to the CTD. Thereafter, the signals are read out.