发明名称 |
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摘要 |
PURPOSE:To obtain a semiconductor device for high frequency of multiple inputs and multiple outputs by providing N type connecting regions and P type carrier extracting regions being shorted thereto in the base region of a vertical NPN transistor. |
申请公布号 |
JPS5917857(B2) |
申请公布日期 |
1984.04.24 |
申请号 |
JP19750155524 |
申请日期 |
1975.12.25 |
申请人 |
TOKYO SHIBAURA ELECTRIC CO |
发明人 |
TOKUMARU SEIYA;NAKAI MASANORI |
分类号 |
H01L27/082;H01L21/8226;H01L27/02;H03K19/091 |
主分类号 |
H01L27/082 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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