| 摘要 |
PURPOSE:To enhance heat-withstanding capability and to facilitate the adjustment of the Schottky barrier height by a method wherein an ion mixing technique is used to eliminate the influence by SiO2 generated on the surface of a substrate. CONSTITUTION:An Si oxide film 11 is grown on an Si substrate 1 and a liftoff material 12 is deposited on the Si oxide film 11. A resist pattern 13 is provided on the liftoff material 12 and works as a mask in a process for etching the liftoff material 12. The liftoff material 12 next works as a mask in a process for the selective etching of the Si oxide film 11 with HF, for the formation of a hole 14, whereafter the resist pattern 13 is separated. A thin film 15 of high melt point metal is deposited on the entire surface by vacuum evaporation with an electron gun. Next, the liftoff material 12 is separated. Then, the thin film 15 is subjected to liftoff except where a Schottky barrier diode is to be formed. After this, ions, Sn ions for example, are implanted through the retained thin film 15 for the formation of a layer of a mixture of Sn, Mo, and Si on the surface of the substrate 1. Finally, heat treatment is performed at high temperatures, for the completion of a diode 4. |
