| 摘要 |
PURPOSE:To slope the carrier concentration of an epitaxial layer by changing the position of Ga as a raw material set and vapor-growing GaAs in an epitaxial manner. CONSTITUTION:An H2 gas flowmeter 5a and a diluted H2 gas flowmeter 5c to an AsCl3 bubbler 7 are connected separately to a reaction pipe 1. H2 gas containing AsCl3 is introduced to the central section of the reaction pipe 1 by a pipe 9 and discharged. When Ga as the raw material is moved left and right by a bar 10, the carrier concentration and a growth rate of a growth layer on a substrate change even when other conditions are made constant and Ga is grown. Carrier concentration in the case when a blowoff port for H2 containing AsCl3 and the nose of the raw material 2 agree reduces when Ga 2 is moved to the left. According to the constitution, the carrier concentration of the epitaxial layer can be sloped simply without changing the flow rate of the gas during growth, and reproducibility is also improved. |
