| 摘要 |
PURPOSE:To reduce the power consumption of the titled memory storage without increasing the occupation area of said device by a method wherein the loading means of the inverter constituting a flip-flop is composed of a polycrystalline Si layer of high specific resistance having low impurity density or containing no impurities and, besides, a polycrystalline Si layer to be used for application of a supply voltage is formed in one body with the above-mentioned layer. CONSTITUTION:An SiO2 film 8a is present on the outer circumferential section of the part which is surrounded by a one-dot chain line, the parts 2a-2c indicated by a broken line are a polycrystalline Si layer, and the 2a is connected to a power supply line VDD. Also, the 2b is the line with which one end of the FERs Q3 and Q4 for transfer, the drain and the gate of the FETs Q1 and Q2 for driving and a load resistor are interconnected respectively, and the 2c is used as a word line. also, the polycrystalline Si layers 3a and 3b, constituting the load resistor, are formed in one body with the polycrystalline Si layers 2a and 2b, and at this time, the layers 3a and 3b are composed of a high specific resistance layer having low impurity density. At this point, parts 7a and 7b are used as the contact part for the FETs Q1-Q4. |
