发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To reduce the number of masks required by half without increasing man-hours by forming an electrode in a plurality of cells by using a mask and forming a bonding pad and a detour electrode to the outsides of the cells by using another mask when the electrode is formed by a device of a type in which the cells are connected by the detour electrode. CONSTITUTION:A desired number of cell regions 2 are formed to the surface layer of a wafer 1, and the surface layers except the regions 2 are coated with gold layers 10 through sputtering. Resist films 11 are applied on the gold layers 10 through oxide films 7, and the electrodes 8a are applied between the cells 2 and the films 11 while being brought into contact with the cells. The films 11 are removed and the central sections of the exposed films 7 are coated with the laminated films of resists 11 and 12, and the cells 2 are also coated with the resists 12, and the bonding pads and the detour electrodes 8 are formed on the films 7 of the outer circumferences of the resist laminated films through electroplating while using these resists as masks.
申请公布号 JPS5972155(A) 申请公布日期 1984.04.24
申请号 JP19820184354 申请日期 1982.10.18
申请人 MITSUBISHI DENKI KK 发明人 TANIGUCHI AKIHISA
分类号 H01L21/60;H01L21/28;H01L21/3205;H01L23/52 主分类号 H01L21/60
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