| 摘要 |
PURPOSE:To obtain the thin-film semiconductor device, which has an excellent (i) film and consists of amorphous silicon, by forming an N layer in a silicon film containing a crystallite generated by the decomposition of a raw material gas to which a V family element is not added. CONSTITUTION:A film obtained by the 10cc/min gas flow-rate, 250cc/min hydrogen flow-rate and 0.07-0.3W/cm<2> discharge power of silane is a crystallite film containing 30-100% (a volume rate) of 30-200Angstrom crystalline silicon grains, and shows N type conductivity even when a PH3 impurity element is not added intentionally. The crystallite N film 2 not added is formed on a metallic substrate 1, a normal a-Si film 3 not added is formed, and a crystallite P type film 4 containing an addition impurity of 10<-2>% or less is formed, and a transparent conductive film 5 and a metallic latticed electrode 6 are formed, thus forming a photosensor of P-I-N structure. Since the impurity is not added to the N type layer 2 formed before forming the (i) film 3, the impurity is taken in on the formation of the (i) film, and the quality of the same is not deteriorated. |
