| 摘要 |
PURPOSE:To bring impurity distribution to a stepped shape, to inhibit the generation of a crystal defect in an epitaxial layer and to improve the characteristics of a device by growing a single crystal on a semiconductor substrate at a low temperature under optical excitation. CONSTITUTION:The Si single crystalline substrate 6 is placed on a carbon susceptor 1 coated with SiC in an epitaxial growth oven, and a halogen lamp heating module 2 is supplied with power, and heated. Ultraviolet beams are irradiated from a Xe-Hg deep UV lamp 5 from the upper section of a square- shaped quartz reactor 4, H2 gas is flowed through the reactor 4, and Si2H6 is added to H2 gas so that concentration reaches 0.5%. The temperature of the silicon substrate is kept at 700-850 deg.C, and ultraviolet rays of a not more than 2,300Angstrom wavelength are used. An autodoping in the case when using a high- concentration substrate can be ignored, and the high-speed device of small power consumption can be realized by a thin epitaxial film. |
