| 摘要 |
PURPOSE:To improve photoelectric conversion efficiency by a method wherein protruded stripes are formed on one of the 1st conductivity type semiconductor layer and the 2nd conductivity type semiconductor layer to which light is applied and recessed stripes which incorporate the protruded stripes are formed in the other semiconductor layer and electrodes are provided near the protruded stripes. CONSTITUTION:A back electrode 11, a P-type semiconductor layer 12 and an N-type diffused layer 13 are successively laminated to constitute a photoelectric conversion element 10. A plurality of electrodes 15 are formed on the photodetecting surface 14 of the diffused layer 13 and the diffused layer 13 is composed of a thin film 16 and a plurality of protruded stripes 17. The protruded stripes 17 are incorporated by recessed stripes 19 formed in the P-type semiconductor layer 12. With this constitution, the total sheet resistance of the N-type diffused layer 13 can be reduced. Therefore, the induced current can be taken out efficiently so that optoelectric conversion efficiency can be improved. |
