| 摘要 |
PURPOSE:To flatten a stepped difference section and a projecting section even when there are these sections by etching a dielectric layer or a semiconductor layer on the semiconductor device by ions or atoms having directional property from the oblique direction or the approximately parallel direction. CONSTITUTION:A polycrystalline silicon film 4 is etched through RIE technique, and an insulating film 31 is deposited. The insulating film 31 on the polycrystalline silicon film 4 is removed through etching by making etching beams 21 having directional property collide from an angle which does not etch the insulating film 31 positioned on the side lower than the side surface of the polycrystalline silicon 4, and the upper section of the semiconductor device is flattened. An insulating film 32 is deposited again, and flattened approximately, and a second polycrystalline silicon film 5 is formed. Even when a wiring as a lower layer must be flattened including the insulating films, a desired step coverage can be formed with excellent controllability, and a complicate process is not required as well. |
