| 摘要 |
PURPOSE:To contrive to stabilize the characteristic of a semiconductor device by a method wherein a W film is provided on a substrate, and moreover the W film is covered with SOG to check oxidation of the W film and to obstruct channeling, and when it is feared that contamination may be generated, P2O5 is added to SOG. CONSTITUTION:The W film is deposited according to sputtering on an Si wafer having a thermal oxide film on the surface. The W film is processed to the prescribed pattern as occasion demands. An undiluted SOG solution is applied thereon, and heating is performed to form an SOG film. However, thickness is made to 20-100nm, and when thickness is made to 100nm or more, SOG becomes to easily crackable. Ion implantation is performed using the W film having the SOG film like this as the mask, and the prescribed conductive regions are provided to complete the semiconductor device. Moreover, the numeral 1 indicates the P2O5 film, and the numeral 2 indicates the SOG film. |
