| 摘要 |
PURPOSE:To sharply cut a wiring pattern with a narrow groove width and little damage at the side of wiring by cutting said wiring pattern using the field emission source ion beam. CONSTITUTION:An aluminum wiring 3 is provided in the thickness of 1mum and width of about 2-2.5mum on the SiO2 film on a substrate 1 and it is covered with a PSG4 in the thickness of about 2mum. Here, a film 4 and the aluminum wiring 3 are cut by the scanning with Si used as the ion source, a beam spot diameter of 0.1mum, beam current of 100pA, energy of 5-20kV and scanning rate of 0.3cm/sec. At this time, the wiring can be cut with a groove width w of 0.2- 0.4mum and a length l of groove formed at a side of wiring 3 can be suppressed to 0.6-0.7 or less. In order to perfectly cut and keep the function of insulating film 2 at the lower part of wiring, the depth d of groove 5 generated on the film 2 is selected to about 1/5 of the thickness of film 2 with an excessive acceleration volage. With such structure, wiring can be cut with little damage on the side of wiring by means of a narrow and sharp groove. |
