| 摘要 |
PURPOSE:To obtain an IC with high integrity and high output power by a method wherein both sides of a semiconductor substrate are polished and on one side of them a crystalline layer of the same crystalline orientation is deposited and required elements are formed on the layer. CONSTITUTION:The front and back surfaces of a semiconductor substrate 11 with (111) plain are parallel-polished while the surface is inclined to 3-5 deg. and an IC substrate with a parallelism less than 2mum and a flatness less than 2mum is obtained. Then a crystalline layer 12 with a thickness of 10-13mum and a resistivity of 1-2OMEGAcm is formed by epitaxial growth and on the grown layer 12 of thus prepared substrate 10 required elements of IC are formed. With this constitution, as the grown layer is formed only on one side surface after the front and back surfaces are polished beforehand, an excellent plain can be obtained regardless to the diameter so that high integrity and high output power can be realized easily. |
