发明名称 |
SEMICONDUCTOR SUBSTRATE PROCESSING EQUIPMENT |
摘要 |
PURPOSE:To clean a reaction tube for processing a semiconductor substrate under ordinary operating condition by adding a cleaning gas flowing equipment which flows a cleaning gas into the tube intermittently to the side of a gas introducing inlet provided to one end of the reaction tube. CONSTITUTION:A three-directional valve 11 is added to the part of the connection between a gas introducing inlet of a quartz reaction tube 3 and a reaction gas control equipment 4 and a cleaning gas flowing equipment 12 is connected to it. With this configuration, a large quantity of high pressure inert gas 13 for cleaning the reaction tube 3 is flown in a moment only into the reaction tube 3 through the equipment 12 by operating the valve 11 to blow up foreign substances 6 such as quartz powder existing in the tube 3 by a turbulent flow 14 and gradually exhausted out of the tube 3 by an exhaustion equipment 15. After the inside of the tube 3 is cleaned completely, the three-directional valve 11 is turned and a reaction gas from the control equipment 4 is introduced into the tube 3. |
申请公布号 |
JPS5968927(A) |
申请公布日期 |
1984.04.19 |
申请号 |
JP19820179406 |
申请日期 |
1982.10.12 |
申请人 |
MATSUSHITA DENKI SANGYO KK |
发明人 |
HIRAI YOSHIHIKO;YONEDA TADANAKA;NISHIKAWA ATSUO;HAGIO MASAMITSU |
分类号 |
H01L21/31;B08B9/02;C23C16/44;H01L21/22 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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