| 摘要 |
PURPOSE:To obtain a multi-layered wiring having high reliability by providing an insulating layer only at the side surface of lower wiring and on a substrate of the semiconductor substrate with the part near the side surface formed thick while the part being far formed thin. CONSTITUTION:An aluminum film is vacuum-deposited on a semiconductor substrate 31, a resist mask 33 is applied and the surface is etched, a lower wiring 32' is formed and a silica film 34 is applied rotatingly. Thereby, a tapered area is adequately formed at the side surface of wiring 32'. The resist 33 is removed and after the processing in the O2 ambient under a temperature of about 400 deg.C, SiO2 35 is deposited and aperture is opened. The upper aluminum wiring 37' is then formed. With this structure, disconnection of upper electrode pattern in the conventional multi-layer wiring and interlayer short-circuit due to generation of pin-hole can be eliminated and both yield of manufacture and reliability can be improved. |
